IRF7726PBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
l Lead-Free
V_DSS
-30V
PD -95992
IRF7726PbF
HEXFET^® Power MOSFET
R_DS(on) max
0.026@V_GS = -10V
0.040@V_GS = -4.5V
I_D
-7.0A
-6.0A
Description
HEXFET^® Power MOSFETs from International Recti-
fier utilize advanced processing techniques to achieve S
extremely low on-resistance per silicon area. This
benefit, combined with the ruggedized device design, ^S
that International Rectifier is well known for, provides _S
the designer with an extremely efficient and reliable
device for battery and load management.
G
The new Micro8 package, with half the footprint area
of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.2mm)
of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J , T_STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
1
8
D
2
7
D
3
6
D
4
5
D
Top View
Max.
-30
-7.0
-5.7
-28
1.79
1.14
0.01
±20
-55 to +150
MICRO-8
Units
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
70
Units
°C/W
1
02/22/05