IRF7705GPBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET® Power MOSFET Ultra Low On-Resistance

l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile ( < 1.2mm)
l Available in Tape & Reel
l Lead-Free
l Halogen-Free
Description
HEXFET^® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
PD- 96142A
IRF7705GPbF
V_DSS
-30V
HEXFET^® Power MOSFET
R_DS(on) max (mW)
18 @V_GS = -10V
30 @V_GS = -4.5V
I_D
-8.0A
-6.0A
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TSSOP-8
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-8.0
-6.0
-30
1.5
0.96
0.012
± 20
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
83
Units
°C/W
1
05/14/09