IRF7703 Datasheet, PDF (1/9 Pages) International Rectifier – Power MOSFET(Vdss=-40V)

l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
Description
HEXFET^® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
V_DSS
-40V
PD - 94221
IRF7703
HEXFET^® Power MOSFET
R_DS(on) max (mΩ)
28@V_GS = -10V
45@V_GS = -4.5V
I_D
-6.0A
-4.8A
1
2
3
G
4
1= D
2= S
3= S
4= G
D
8
7
6
S
5
8= D
7= S
6= S
5= D
TSSOP-8
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
-40
-6.0
-4.7
-24
1.5
0.96
0.012
± 20
-55 to + 150
Units
V
A
W
W/°C
V
°C
Max.
83
Units
°C/W
1
05/11/01