IRF7702TR Datasheet, PDF (1/8 Pages) International Rectifier – Ultra Low On-Resistance

l Ultra Low On-Resistance
l -1.8V Rated
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile ( < 1.1mm)
l Available in Tape & Reel
PROVISIONAL
V_DSS
-12V
PD - 93849C
IRF7702
HEXFET^® Power MOSFET
R_DS(on) max
0.014@V_GS = -4.5V
0.019@V_GS = -2.5V
0.027@V_GS = -1.8V
I_D
-8.0A
-7.0A
-5.8A
Description
HEXFET^® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
1
2
3
G
4
1= D
2= S
3= S
4= G
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
V_DS
I_D @ T_C = 25°C
I_D @ T_C = 70°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
D
8
7
6
S
5
8= D
7= S
6= S
5= D
Max.
-12
±8.0
±7.0
±70
1.5
0.96
0.01
± 8.0
-55 to + 150
TSSOP-8
Units
V
A
W
W/°C
V
°C
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
83
Units
°C/W
1
6/19/00