IRF7503 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)

l Generation V Technology
l Ultra Low On-Resistance
S1
l Dual N-Channel MOSFET
l Very Small SOIC Package
G1
l Low Profile (<1.1mm)
S2
l Available in Tape & Reel
G2
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
I_D @ T_A = 25°C
ID @ TA = 70°C
IDM
P_D @T_A = 25°C
V_GS
dv/dt
TJ,TSTG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
PD - 9.1266G
IRF7503
HEXFET^® Power MOSFET
1
8
D1
2
7
D1
3
6
D2
4
5
D2
T o p V iew
V_DSS = 30V
R_DS(on) = 0.135Ω
M ic r o 8
Max.
2.4
1.9
14
1.25
10
± 20
5.0
-55 to + 150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient„
Typ.
–––
Max.
100
Units
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
8/25/97