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IRF7488PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – High frequency DC-DC converters
Applications
l High frequency DC-DC converters
l Lead-Free
PD - 95283
IRF7488PbF
HEXFET® Power MOSFET
VDSS
80V
RDS(on) max
29mW@VGS=10V
Qg
38nC
Benefits
S
1
AA
8
D
l Low Gate-to-Drain Charge to Reduce
S
2
Switching Losses
l Fully Characterized Capacitance Including S 3
7
D
6
D
Effective COSS to Simplify Design, (See
G
4
5
D
App. Note AN1001)
l Fully Characterized Avalanche Voltage
Top View
and Current
SO-8
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through „ are on page 9
www.irf.com
Max.
80
± 20
6.3
5.0
50
2.5
1.6
20
-55 to + 150
300 (1.6mm from case )
Units
V
A
W
mW/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
09/21/04