IRF7476PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET ( VDSS = 12V , RDS(on) max = 8.0mΩ@VGS = 4.5V , ID = 15A )

PD - 95279
IRF7476PbF
HEXFET^® Power MOSFET
Applications
l High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters for
Netcom and Computing Applications.
l Power Management for Netcom,
Computing and Portable Applications.
l Lead-Free
Benefits
l Ultra-Low Gate Impedance
l Very Low R_DS(on)
l Fully Characterized Avalanche Voltage
and Current
V_DSS
12V
R_DS(on) max
I_D
8.0mW@V_GS = 4.5V 15A
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
Top View
SO-8
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
T_J , T_STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current
Maximum Power Dissipation„
Maximum Power Dissipation„
Linear Derating Factor
Junction and Storage Temperature Range
Max.
12
±12
15
12
120
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Symbol
R_θJL
R_θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through „ are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
04/05/06