IRF7474PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET®Power MOSFET

PD- 95277
IRF7474PbF
HEXFET^® Power MOSFET
Applications
l Telecom and Data-Com 24 and 48V
input DC-DC converters
l Motor Control
l Uninterruptible Power Supply
l Lead-Free
V_DSS
100V
R_DS(on) max
I_D
63mW@V_GS = 10V 4.5A
Benefits
S
1
AA
8
D
l Low On-Resistance
S
2
7
D
l High Speed Switching
S
3
l Low Gate Drive Current Due to Improved
G
4
Gate Charge Characteristic
6
D
5
D
l Improved Avalanche Ruggedness and
Dynamic dv/dt
Top View
l Fully Characterized Avalanche Voltage
and Current
SO-8
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
4.5
3.6
36
2.5
0.02
± 20
5.5
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
R_θJL
R_θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through † are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
09/21/04