IRF7465 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=150V, Id=1.9A)

SMPS MOSFET
Applications
l High frequency DC-DC converters
V_DSS
150V
PD-93896
IRF7465
HEXFET^® Power MOSFET
R_DS(on) max
I_D
0.28Ω@V_GS = 10V 1.9A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
S
1
A
A
8
D
l Fully Characterized Capacitance Including S ²
7
D
Effective C_OSS to Simplify Design (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
S
3
G
4
6
D
5
D
and Current
T op V iew
SO-8
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
1.9
1.5
15
2.5
0.02
± 30
7.8
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
R_θJL
R_θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through † are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
2/8/01