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IRF7464 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)max=0.73ohm, Id=1.2A)
PD- 93895
SMPS MOSFET
IRF7464
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
200V
RDS(on) max
ID
0.73Ω
1.2A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
S
1
AA
8
D
l Fully Characterized Capacitance Including S 2
7
D
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
S
3
G
4
6
D
5
D
and Current
Top View
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
1.2
1.0
10
2.5
0.02
± 30
6.8
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Telecom 48V input Forward Converter
Notes  through † are on page 8
www.irf.com
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