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IRF7463 Datasheet, PDF (1/7 Pages) International Rectifier – Power MOSFET(Vdss=30V, Rds(on)max=0.008ohm, Id=14A)
PD- 93843A
SMPS MOSFET
IRF7463
Applications
l High Frequency DC-DC Converters
with Synchronous Rectification
HEXFET® Power MOSFET
VDSS RDS(on) max
ID
30V
0.008Ω
14A
Benefits
l Ultra-Low RDS(on) at 4.5V VGS
l Low Charge and Low Gate Impedance to
Reduce Switching Losses
l Fully Characterized Avalanche Voltage
and Current
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
14
11
110
2.5
1.6
0.02
± 12
-55 to + 150
Units
A
W
W/°C
V
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient†
Max.
50
Units
°C/W
Typical SMPS Topologies
l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes  through † are on page 7
www.irf.com
1
3/30/00