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IRF7451PBF Datasheet, PDF (1/8 Pages) International Rectifier – SMPS MOSFET
PD- 95725
SMPS MOSFET
IRF7451PbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
150V
RDS(on) max
0.09W
ID
3.6A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
Top View
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation†
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
3.6
2.9
29
2.5
0.02
± 30
7.9
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient †
Notes  through † are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
8/10/04