IRF7433 Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
V_DSS
-12V
PD -94056
IRF7433
HEXFET^® Power MOSFET
R_DS(on) max
24mΩ@V_GS = -4.5V
30mΩ@V_GS = -2.5V
46mΩ@V_GS = -1.8V
I_D
-8.7A
-7.4A
-6.3A
Description
These P-Channel MOSFETs from International ^{S 1}
Rectifier utilize advanced processing techniques to _S 2
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an S ³
extremely efficient device for use in battery and load
management applications..
G
4
A
8
D
7
D
6
D
5
D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J , T_STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-8.9
-7.1
-36
2.5
1.6
0.02
±8
-55 to +150
Units
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
50
Units
°C/W
1
12/15/00