IRF7421D1_98 Datasheet, PDF (1/8 Pages) International Rectifier – MOSFET / Schottky Diode

PD- 91411C
PRELIMINARY
IRF7421D1
FETKY^™ MOSFET / Schottky Diode
l Co-packaged HEXFET^® Power
MOSFET and Schottky Diode
l Ideal For Synchronous Regulator
Applications
l Generation V Technology
l SO-8 Footprint
A
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
Description
Top V iew
The FETKY^TM family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
V_DSS = 30V
R_DS(on) = 0.035Ω
Schottky Vf = 0.39V
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
S O -8
Absolute Maximum Ratings (T_A = 25°C unless otherwise noted)
Parameter
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Continuous Drain Current, V_GS@10V
Pulsed Drain Current Œ
Power Dissipation 
Linear Derating Factor
Maximum
5.8
4.6
46
2.0
1.3
16
V_GS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt 
± 20
-5.0
T_J, T_STG
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
Parameter
R_θJA
Junction-to-Ambient 
Maximum
62.5
Notes:
ΠRepetitive rating; pulse width limited by maximum junction temperature (see figure 11)
 I_SD ≤ 4.1A, di/dt ≤ 110A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
Ž Pulse width ≤ 300µs; duty cycle ≤ 2%
 Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com
7421d1.p65
1
8/20/98, 4:07 PM
Units
A
W
W/°C
V
V/ns
°C
Units
°C/W
1
8/20/98