IRF7421D1PBF Datasheet, PDF (1/8 Pages) International Rectifier – FETKY MOSFET / Schottky Diode

PD- 95304
IRF7421D1PbF
FETKY^ä MOSFET / Schottky Diode
l Co-packaged HEXFET^® Power
MOSFET and Schottky Diode
A
1
AA
8
D
l Ideal For Synchronous Regulator
Applications
l Generation V Technology
S
2
S
3
7
D
6
D
l SO-8 Footprint
G
4
5
D
l Lead-Free
Description
Top View
The FETKY^TM family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
V_DSS = 30V
R_DS(on) = 0.035Ω
Schottky Vf = 0.39V
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings (T_A = 25°C unless otherwise noted)
Parameter
Maximum
I_D @ T_A = 25°C
Continuous Drain Current, V_GS@10VÃ
5.8
I_D @ T_A = 70°C
4.6
I_DM
Pulsed Drain Current À
46
P_D @T_A = 25°C
Power Dissipation Ã
2.0
P_D @T_A = 70°C
1.3
Linear Derating Factor
16
V_GS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
± 20
-5.0
T_J, T_STG
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
Parameter
R_θJA
Junction-to-Ambient Ã
Maximum
62.5
Notes:
À Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
Á I_SD ≤ 4.1A, di/dt ≤ 110A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
 Pulse width ≤ 300µs; duty cycle ≤ 2%
à Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com
Units
A
W
W/°C
V
V/ns
°C
Units
°C/W
1
10/13/04