IRF7416PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

l Generation V Technology
l Ultra Low On-Resistance
l P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
PD - 95137
IRF7416PbF
HEXFET^® Power MOSFET
S
1
S
2
S
3
G
4
A
8
D
7
D
6
D
5
D
Top View
V_DSS = -30V
R_DS(on) = 0.02Ω
SO-8
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
E_AS
dv/dt
T_J, T_STG
Parameter
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ - 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Max.
-10
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
Units
A
W
mW/°C
V
mJ
V/ns
°C
Thermal Resistance Ratings
Parameter
R_θJA
Maximum Junction-to-Ambient…
www.irf.com
Typ.
–––
Max.
50
Units
°C/W
1
06/06/05