IRF7413_07 Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET POWER MOSFET

l Generation V Technology
l Ultra Low On-Resistance
S
l N-Channel Mosfet
l Surface Mount
S
l Available in Tape & Reel
S
l Dynamic dv/dt Rating
l Fast Switching
G
l 100% R_G Tested
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Power Dissipation
E_AS
dv/dt
Linear Derating Factor
d Single Pulse Avalanche Energency
e Peak Diode Recovery dv/dt
T_J, T_STG
Junction and Storage Temperature Range
Thermal Resistance Ratings
R_θJL
R_θJA
Symbol
Parameter
h Junction-to-Drain Lead
gh Junction-to-Ambient
PD - 91330I
IRF7413
HEXFET^® Power MOSFET
AA
1
8
D
2
7
D
3
6
D
4
5
D
Top View
V_DSS = 30V
R_DS(on) = 0.011Ω
SO-8
Max
30
± 20
13
9.2
58
2.5
0.02
260
5.0
-55 to +150
Typ
Max
–––
20
–––
50
Units
V
A
W
mW/°C
mJ
V/ns
°C
Units
°C/W
02/14/07