IRF7413QPBF_10 Datasheet, PDF (1/9 Pages) International Rectifier – HEXFETPOWERMOSFET

l Advanced Process Technology
l Ultra Low On-Resistance
l N Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
Description
These HEXFET^® Power MOSFET's in SO-8 package
utilize the lastest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of these HEXFET Power MOSFET's
are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremely efficient and reliable device for use in a wide
variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape &
Reel.
PD - 96112A
IRF7413QPbF
S
1
S
2
HEXFET^® Power MOSFET
AA
8
D
7
D
V_DSS = 30V
S
3
6
D
G
4
5
D
Top View
R_DS(on) = 0.011Ω
SO-8
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Power Dissipation
E_AS
dv/dt
Linear Derating Factor
d Single Pulse Avalanche Energency
e Peak Diode Recovery dv/dt
T_J, T_STG
Junction and Storage Temperature Range
Thermal Resistance Ratings
R_θJL
R_θJA
Symbol
Parameter
h Junction-to-Drain Lead
gh Junction-to-Ambient
Max
30
± 20
13
9.2
58
2.5
0.02
260
5.0
-55 to +150
Typ
Max
–––
20
–––
50
Units
V
A
W
mW/°C
mJ
V/ns
°C
Units
°C/W
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1
08/09/10