IRF7410PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET®Power MOSFET

l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
V_DSS
-12V
PD - 96028A
IRF7410PbF
HEXFET^® Power MOSFET
R_DS(on) max
7mΩ@V_GS = -4.5V
9mΩ@V_GS = -2.5V
13mΩ@V_GS = -1.8V
I_D
-16A
-13.6A
-11.5A
Description
These P-Channel HEXFET^® Power MOSFETs from
International Rectifier utilize advanced processing
S
1
techniques to achieve the extremely low on-resistance
S
2
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery ^{S 3}
and load management applications..
G
4
A
8
D
7
D
6
D
5
D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-16
-13
-65
2.5
1.6
20
±8
-55 to +150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
50
Units
°C/W
1
8/25/06