IRF7402 Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

PD - 93851A
IRF7402
l Generation V Technology
l Ultra Low On-Resistance
S
l N-Channel MOSFET
l Very Small SOIC Package
S
l Low Profile (<1.1mm)
S
l Available in Tape & Reel
G
l Fast Switching
Description
Fifth Generation HEXFET^® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
HEXFET^® Power MOSFET
A
A
1
8
D
2
7
D
V_DSS = 20V
3
6
D
4
5
D
R_DS(on) = 0.035Ω
T op V iew
The SO-8 has been modified through a customized
leadframe for enhanced thermal characterstics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared or wave soldering techniques.
Power dissipation of greater than 0.8 W is possible in a
typical PCB mount application.
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
dv/dt
T_J, T_STG
Parameter
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
SO-8
Max.
6.8
5.4
54
2.5
1.6
0.02
± 12
5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambient „
Max.
50
Units
°C/W
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