IRF7380QPBF_10 Datasheet, PDF (1/8 Pages) International Rectifier – Advanced Process Technology Ultra Low On-Resistance

PD - 96132B
IRF7380QPbF
l Advanced Process Technology
l Ultra Low On-Resistance
l N Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
Description
Additional features of These HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits
combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics making it ideal in a variety
of power applications. This surface mount SO-8
can dramatically reduce board space and is also
available in Tape & Reel.
V_DSS
80V
HEXFET^® Power MOSFET
R_DS(on) max
I_D
: 73m @V_GS = 10V 2.2A
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
SO-8
Absolute Maximum Ratings
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 100°C
I_DM
P_D @T_A = 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
dv/dt
T_J
T_STG
Linear Derating Factor
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R_θJL
Junction-to-Drain Lead
R_θJA
Junction-to-Ambient (PCB Mount) *
Notes  through † are on page 8
www.irf.com
Max.
80
± 20
3.6h
2.9
29
2.0
0.02
2.3
-55 to + 150
Units
V
A
W
W/°C
V/ns
°C
Typ.
–––
–––
Max.
42
50
Units
°C/W
1
08/09/10