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IRF7380PBF_15 Datasheet, PDF (1/8 Pages) International Rectifier – High frequency DC-DC converters
Applications
l High frequency DC-DC converters
l Lead-Free
IRF7380PbF
VDSS
80V
HEXFET® Power MOSFET
RDS(on) max
ID
: 73m @VGS = 10V 3.6A
Benefits
l Low Gate to Drain Charge to Reduce
S1
1
8
D1
Switching Losses
G1
2
7
D1
l Fully Characterized Capacitance Including S2 3
6
D2
Effective COSS to Simplify Design, (See
App. Note AN1001)
G2
4
5
D2
l Fully Characterized Avalanche Voltage
Top View
and Current
SO-8
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 100°C
IDM
PD @TA = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
c Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
dv/dt
TJ
TSTG
Linear Derating Factor
h Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
RθJL
RθJA
Junction-to-Drain Lead
f Junction-to-Ambient (PCB Mount)
Max.
80
± 20
3.6
2.9
29
2.0
0.02
2.3
-55 to + 150
Units
V
A
W
W/°C
V/ns
°C
Typ.
–––
–––
Max.
42
62.5
Units
°C/W
Notes  through † are on page 8
1
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September 16, 2013