IRF7379 Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET

PD - 91625
IRF7379
HEXFET^® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Complimentary Half Bridge
l Surface Mount
l Fully Avalanche Rated
Description
N-CHANNEL MOSFET
S1
1
8
D1
N-Ch P-Ch
G1
2
S2
3
7
D1
V_DSS 30V -30V
6
D2
G2
4
5
D2
P-CHANNEL MOSFET
R_DS(on) 0.045Ω 0.090Ω
Top V iew
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
S O -8
Absolute Maximum Ratings
V_SD
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J, T_STG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance Ratings
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambient„
Max.
N-Channel
P-Channel
30
-30
5.8
-4.3
4.6
-3.4
46
-34
2.5
0.02
± 20
5.0
-5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Max.
50
Units
°C/W
1
12/8/98