IRF7353D2PBF Datasheet, PDF (1/8 Pages) International Rectifier – MOSFET / Schottky Diode (VDSS = 30V , RDS(on) = 0.029Ω , Schottky VF = 0.52V)

PD- 95215A
IRF7353D2PbF
l Co-Pack HEXFET^® Power MOSFET and
Schottky Diode
l Ideal For Buck Regulator Applications ^A
l N-Channel HEXFET power MOSFET
A
l Low V_F Schottky Rectifier
l Generation 5 Technology
S
l SO-8 Footprint
G
l Lead-Free
FETKY^ä MOSFET / Schottky Diode
1
8
2
7
3
6
4
5
Top View
K
V_DSS = 30V
K
D ^{RDS(on) = 0.029Ω}
D _{Schottky VF = 0.52V}
Description
The FETKY™ family of Co-Pack HEXFET^® Power MOSFETs and Schottky
diodes offers the designer an innovative, board space saving solution for
switching regulator and power management applications. Generation 5
HEXFET power MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combinining this
technology with International Rectifier's low forward drop Schottky rectifiers
results in an extremely efficient device suitable for use in a wide variety of
portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings (T_A = 25°C unless otherwise noted)
Parameter
Maximum
I_D @ T_A = 25°C
Continuous Drain Current Ã
6.5
I_D @ T_A = 70°C
5.2
I_DM
Pulsed Drain Current À
52
P_D @T_A = 25°C
Power Dissipation Ã
2.0
P_D @T_A = 70°C
1.3
Linear Derating Factor
16
V_GS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
± 20
-5.0
T_J, T_STG
Junction and Storage Temperature Range
-55 to +150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R_θJA
Junction-to-Ambient …
Maximum
62.5
Notes:
À Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
Á Starting T_J = 25°C, L = 10mH, R_G = 25Ω, I_AS = 4.0A
 I_SD ≤ 4.0A, di/dt ≤ 74A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
à Pulse width ≤ 300µs; duty cycle ≤ 2%
…† Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com
Units
°C/W
1
10/8/04