IRF7353D2 Datasheet, PDF (1/8 Pages) International Rectifier – FETKY MOSFET / Schottky Diode

PD- 93809
IRF7353D2
FETKY^™ MOSFET / Schottky Diode
q Co-Pack HEXFET^® Power MOSFET and
Schottky Diode
A
q Ideal For Buck Regulator Applications A
q N-Channel HEXFET power MOSFET
q Low V_F Schottky Rectifier
S
q Generation 5 Technology
G
q SO-8 Footprint
1
8
2
7
3
6
4
5
Top View
K
V_DSS = 30V
K
D ^{RDS(on) = 0.029Ω}
D _{Schottky VF = 0.52V}
Description
The FETKY™ family of Co-Pack HEXFET^® Power MOSFETs and Schottky
diodes offers the designer an innovative, board space saving solution for
switching regulator and power management applications. Generation 5
HEXFET power MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combinining this
technology with International Rectifier's low forward drop Schottky rectifiers
results in an extremely efficient device suitable for use in a wide variety of
portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings (T_A = 25°C unless otherwise noted)
Parameter
Maximum
I_D @ T_A = 25°C
Continuous Drain Current 
6.5
I_D @ T_A = 70°C
5.2
I_DM
Pulsed Drain Current Œ
52
P_D @T_A = 25°C
Power Dissipation 
2.0
P_D @T_A = 70°C
1.3
Linear Derating Factor
16
V_GS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt 
± 20
-5.0
T_J, T_STG
Junction and Storage Temperature Range
-55 to +150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R_θJA
Junction-to-Ambient …
Maximum
62.5
Notes:
ΠRepetitive rating; pulse width limited by maximum junction temperature (see figure 9)
 Starting T_J = 25°C, L = 10mH, R_G = 25Ω, I_AS = 4.0A
Ž I_SD ≤ 4.0A, di/dt ≤ 74A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
 Pulse width ≤ 300µs; duty cycle ≤ 2%
… Surface mounted on FR-4 board, t ≤ 10sec.
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7353d2.p65
1
11/8/99, 3:01 PM
Units
°C/W
1
11/8/99