IRF7353D1 Datasheet, PDF (1/8 Pages) International Rectifier – FETKY MOSFET / Schottky Diode

PD- 91802A
IRF7353D1
FETKY^™ MOSFET / Schottky Diode
q Co-packaged HEXFET^® Power MOSFET
and Schottky Diode
A
1
8
K
q Ideal For Buck Regulator Applications
q N-Channel HEXFET
q Low V_F Schottky Rectifier
q Generation 5 Technology
A
2
S
3
G
4
7
K
6
D
5
D
q SO-8 Footprint
Description
Top View
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
V_DSS = 30V
R_DS(on) = 0.029Ω
Schottky Vf = 0.39V
S O -8
Absolute Maximum Ratings (T_A = 25°C unless otherwise noted)
Parameter
Maximum
I_D @ T_A = 25°C
Continuous Drain Current 
6.5
I_D @ T_A = 70°C
5.2
I_DM
Pulsed Drain Current Œ
52
P_D @T_A = 25°C
Power Dissipation 
2.0
P_D @T_A = 70°C
1.3
Linear Derating Factor
16
V_GS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt 
± 20
-5.0
T_J, T_STG
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
Parameter
R_θJA
Junction-to-Ambient …
Maximum
62.5
Notes:
ΠRepetitive rating; pulse width limited by maximum junction temperature (see figure 9)
 Starting T_J = 25°C, L = 10mH, R_G = 25Ω, I_AS = 4.0A
Ž I_SD ≤ 4.0A, di/dt ≤ 74A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
 Pulse width ≤ 300µs; duty cycle ≤ 2%
… Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com
Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
1
3/17/99