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IRF7351PBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – Low Power Motor Drive Systems
Applications
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
l Low Power Motor Drive Systems
PD - 97436
IRF7351PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg (typ.)
60V 17.8mΩ@VGS = 10V 24nC
Benefits
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
c Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
f Power Dissipation
f Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJL
RθJA
g Parameter
Junction-to-Drain Lead
fg Junction-to-Ambient
Max.
60
± 20
8.0
6.4
64
2.0
1.28
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
Notes  through … are on page 10
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1
11/18/09