IRF7350 Datasheet, PDF (1/16 Pages) International Rectifier – Power MOSFET(Vdss=+-100V)

PD - 94226B
IRF7350
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape and Reel
HEXFET^® Power MOSFET
N-CHANNEL MOSFET
S1
1
8
D1
N-Ch P-Ch
G1
2
S2
3
7
D1
V_DSS 100V -100V
6
D2
G2
4
5
D2
P -C H AN N EL MO SFET
R_DS(on) 0.21Ω 0.48Ω
Top View
Description
These dual N and P channel HEXFET^® power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET^® power MOSFETs are
well known for, provides the designer with an extremely efficient and reliable
device for use in DC motor drives and load management applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety
of power applications. With these improvements, multiple devices can be
used in an application with dramatically reduced board space. The package
is designed for vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
E_AS
V_GS
dv/dt
T_J, T_STG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance
Symbol
R_θJL
R_θJA
www.irf.com
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ƒ
Max.
N-Channel
P-Channel
100
2.1
1.7
8.4
2.0
0.016
35
± 20
4.0
-55 to + 150
-100
-1.5
-1.2
-6.0
51
± 20
4.3
Units
A
W
W/°C
mJ
V
V/ns
°C
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
08/09/01