IRF7343QPBF_10 Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET POWER MOSFET

PD - 96110A
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
Description
These HEXFET^® Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating.These benefits combine to make
this design an extremely efficient and reliable device for use
in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
IRF7343QPBF
HEXFET^® Power MOSFET
N-CHANNEL MOSFET
S1
1
8
D1
N-Ch P-Ch
G1
2
S2
3
7
D1
V_DSS 55V -55V
6
D2
G2
4
5
D2
P-CHANNEL MOSFET
R_DS(on) 0.050Ω 0.105Ω
Top View
SO-8
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
E_AS
I_AR
E_AR
V_GS
dv/dt
T_J, T_STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation …
Maximum Power Dissipation …
Single Pulse Avalanche Energyƒ
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambient …
www.irf.com
Max.
N-Channel
P-Channel
55
-55
4.7
-3.4
3.8
-2.7
38
-27
2.0
1.3
72
114
4.7
-3.4
0.20
± 20
5.0
-5.0
-55 to + 150
Units
V
A
W
W
mJ
A
mJ
V
V/ns
°C
Typ.
–––
Max.
62.5
Units
°C/W
1
08/09/10