IRF7343 Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

PD -91709
l Generation V Technology
l Ultra Low On-Resistance
S1
l Dual N and P Channel MOSFET
G1
l Surface Mount
l Fully Avalanche Rated
S2
G2
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
E_AS
I_AR
E_AR
V_GS
dv/dt
T_J, T_STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation …
Maximum Power Dissipation …
Single Pulse Avalanche Energyƒ
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
IRF7343
HEXFET^® Power MOSFET
N-CHANNEL MOSFET
1
8
2
7
3
6
4
5
P -C H AN N EL MO SFET
Top View
N-Ch P-Ch
D1
D1
V_DSS 55V
D2
-55V
D2
R_DS(on) 0.050Ω 0.105Ω
S O -8
Max.
N-Channel
P-Channel
55
-55
4.7
-3.4
3.8
-2.7
38
-27
2.0
1.3
72
114
4.7
-3.4
0.20
± 20
5.0
-5.0
-55 to + 150
Units
V
A
W
W
mJ
A
mJ
V
V/ns
°C
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambient …
Typ.
–––
Max.
62.5
Units
°C/W
1
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