IRF7342QPBF_10 Datasheet, PDF (1/7 Pages) International Rectifier – HEXFET® Power MOSFET

l Advanced Process Technology
l Ultra Low On-Resistance
l Dual P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
Description
These HEXFET^® Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to
make this design an extremely efficient and reliable device
for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
PD - 96109A
IRF7342QPbF
HEXFET^® Power MOSFET
S1
1
G1
2
8
D1
7
D1
V_DSS = -55V
S2
3
6
D2
G2
4
5 _{D2 RDS(on) = 0.105Ω}
Top View
SO-8
Absolute Maximum Ratings
V_DS
I_D @ T_C = 25°C
I_D @ T_C = 70°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 70°C
V_GS
V_GSM
E_AS
dv/dt
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambient…
Max.
-55
-3.4
-2.7
-27
2.0
1.3
0.016
± 20
30
114
5.0
-55 to + 150
Units
V
A
W
W/°C
V
V
V/ns
°C
Typ.
–––
Max.
62.5
Units
°C/W
1
08/03/10