IRF7341QPBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET® Power MOSFET

PD - 96108
IRF7341QPbF
Typical Applications
• Anti-lock Braking Systems (ABS)
• Electronic Fuel Injection
• Air bag
Benefits
• Advanced Process Technology
• Dual N-Channel MOSFET
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Repetitive Avalanche Allowed up to Tjmax
• Automotive [Q101] Qualified
• Lead-Free
Description
Specifically designed for Automotive applications, these
HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET’s are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
The 175°C rating for the SO-8 package provides improved
thermal performance with increased safe operating area and
dual MOSFET die capability make it ideal in a variety of
power applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also available in
Tape & Reel.
V_DSS
55V
HEXFET^® Power MOSFET
R_DS(on) max
0.050@V_GS = 10V
0.065@V_GS = 4.5V
I_D
5.1A
4.42A
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
SO-8
Absolute Maximum Ratings
Parameter
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Drain-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
T_J , T_STG
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Max.
55
5.1
4.2
42
2.4
1.7
16
± 20
140
5.1
See Fig. 14, 15, 16
-55 to + 175
Units
V
A
W
W
mW/°C
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
Max.
R_θJA
Maximum Junction-to-Ambient ƒ
Units
62.5
°C/W
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1
07/23/07