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IRF7341Q Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
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PD - 94391B
Typical Applications
⢠Anti-lock Braking Systems (ABS)
⢠Electronic Fuel Injection
⢠Air bag
Benefits
⢠Advanced Process Technology
⢠Dual N-Channel MOSFET
⢠Ultra Low On-Resistance
⢠175°C Operating Temperature
⢠Repetitive Avalanche Allowed up to Tjmax
⢠Automotive [Q101] Qualified
VDSS
55V
IRF7341Q
HEXFET® Power MOSFET
RDS(on) max
0.050@VGS = 10V
0.065@VGS = 4.5V
ID
5.1A
4.42A
Description
Specifically designed for Automotive applications, these
S1
HEXFET ® Power MOSFETâs in a Dual SO-8 package utilize G1
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these S2
Automotive qualified HEXFET Power MOSFETâs are a 175°C
junction operating temperature, fast switching speed and G2
improved repetitive avalanche rating. These benefits com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
The 175°C rating for the SO-8 package provides improved
thermal performance with increased safe operating area and
dual MOSFET die capability make it ideal in a variety of
power applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also available in
Tape & Reel.
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain CurrentÂ
Maximum Power DissipationÂ
Maximum Power DissipationÂ
Linear Derating Factor
VGS
EAS
IAR
EAR
TJ , TSTG
Gate-to-Source Voltage
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Repetitive Avalanche Energy
Junction and Storage Temperature Range
1
8
D1
2
7
D1
3
6
D2
4
5
D2
Top View
Max.
55
5.1
4.2
42
2.4
1.7
16
± 20
140
5.1
See Fig. 14, 15, 16
-55 to + 175
SO-8
Units
V
A
W
W
mW/°C
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
Max.
RθJA
Maximum Junction-to-Ambient Â
www.irf.com
Units
62.5
°C/W
1
02/15/05
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