IRF7341GPBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET® Power MOSFET

IRF7341GPbF
• Advanced Process Technology
• ÿDual N-Channel MOSFET
• ÿUltra Low On-Resistance
• ÿ175°C Operating Temperature
• ÿ Repetitive Avalanche Allowed up to Tjmax
• ÿLead-Free
• ÿHalogen-Free
V_DSS
55V
HEXFET^® Power MOSFET
R_DS(on) max
0.050@V_GS = 10V
0.065@V_GS = 4.5V
I_D
5.1A
4.42A
Description
These HEXFET ® Power MOSFET’s in a Dual SO-8 package
S1
1
8
D1
utilize the lastest processing techniques to achieve extremely _G1 ²
low on-resistance per silicon area. Additional features of these
HEXFET Power MOSFET’s are a 175°C junction operating S2 ³
7
D1
6
D2
temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design
G2
4
5
D2
an extremely efficient and reliable device for use in a wide
variety of other applications.
Top View
The 175°C rating for the SO-8 package provides improved
thermal performance with increased safe operating area and
dual MOSFET die capability make it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
SO-8
Base Part Number Package Type
IRF7341GPbF
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7341GPbF
IRF7341GTRPbF
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
E_AS
I_AR
E_AR
T_J , T_STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambient ƒ
Max.
55
5.1
4.2
42
2.4
1.7
16
± 20
140
5.1
See Fig. 14, 15, 16
-55 to + 175
Max.
62.5
Units
V
A
W
W
mW/°C
V
mJ
A
mJ
°C
Units
°C/W
1
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