IRF7341 Datasheet, PDF (1/7 Pages) International Rectifier – HEXFET Power MOSFET

PD -91703
IRF7341
HEXFET^® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
S1
1
G1
2
8
D1
7
D1
V_DSS = 55V
S2
3
6
D2
G2
4
5 _{D 2 RDS(on) = 0.050Ω}
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
V_DS
I_D @ T_C = 25°C
I_D @ T_C = 70°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 70°C
V_GS
V_GSM
E_AS
dv/dt
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
S O -8
Max.
55
4.7
3.8
38
2.0
1.3
0.016
± 20
30
72
5.0
-55 to + 150
Units
V
A
W
W/°C
V
V
V/ns
°C
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambient…
Typ.
–––
Max.
62.5
Units
°C/W
1
02/24/99