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IRF7335D1 Datasheet, PDF (1/12 Pages) International Rectifier – Dual FETKY CO-PACKAGED DUAL MOSFET PLUS SCHOTTKY DIODE
PD- 94546
IRF7335D1
• Co-Pack Dual N-channel HEXFET Power MOSFET
and Schottky Diode
Dual FETKY™
• Ideal for Synchronous Buck DC-DC
Converters Up to 11A Peak Output
Co-Packaged Dual MOSFET Plus Schottky Diode
• Low Conduction Losses
• Low Switching Losses
Device Ratings (Typ.Values)
• Low Vf Schottky Rectifier
Q1
Q2
D1 1
D1 2
G1 3
G2 4
S2 5
S2 6
S2 7
Q1
Q2
14 S1, D2
13 S1, D2
12 S1, D2
11 S1, D2
10 S1, D2
9 S1, D2
8 S1, D2
R
DS(on)
Q
G
Qsw
VSD
and Schottky
13.4 mΩ 9.6 mΩ
13 nC
18 nC
5.5 nC 6.4 nC
1.0V
0.43V
Description
The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and power management applications. Advanced
HEXFETMOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable
for a wide variety of portable electronics applications.
The SO-14 has been modified through a customized leadframe for enhanced thermal characteristics and
multiple die capability making it ideal in a variety of power applications. With these improvements multiple
devices can be used in an application with dramatically reduced board space. Internal connections enable
easier board layout design with reduced stray inductance.
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
EAS (6 sigma)
TJ
TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V„
Continuous Drain Current, VGS @ 10V„
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy …
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
30
10
8.1
81
2.0
1.3
0.02
± 12
50
-55 to + 150
300 (1.6mm from case )
Units
V
A
W
W/°C
V
mJ
°C
Thermal Resistance
Symbol
RθJL
RθJA
Notes 
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ƒ
through … are on page 12
Typ.
Max.
20
62.5
Units
°C/W
9/11/02