IRF7329PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

l Trench Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Low Profile (<1.8mm)
l Available in Tape & Reel
l Lead-Free
V_DSS
-12V
PD - 95042
IRF7329PbF
HEXFET^® Power MOSFET
R_DS(on) max (mW)
17@V_GS = -4.5V
21@V_GS = -2.5V
30@V_GS = -1.8V
I_D
±9.2A
±7.4A
±4.6A
Description
New P-Channel HEXFET^® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the ruggedized
S1
1
device design that HEXFET Power MOSFETs are well _G1 2
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications. S2 ³
8
D1
7
D1
6
D2
The SO-8 has been modified through a customized ^{G2 4}
5
D2
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
Top View
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
R_θJL
R_θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ƒ
www.irf.com
Max.
-12
-9.2
-7.4
-37
2.0
1.3
16
± 8.0
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
10/7/04