IRF7328PBF_10 Datasheet, PDF (1/8 Pages) International Rectifier – Trench Technology Ultra Low On-Resistance

lÿÿTrench Technology
lÿÿUltra Low On-Resistance
lÿ Dual P-Channel MOSFET
lÿAvailable in Tape & Reel
lÿ Lead-Free
V_DSS
-30V
PD - 95196A
IRF7328PbF
HEXFET^® Power MOSFET
R_DS(on) max
21mΩ@V_GS = -10V
32mΩ@V_GS = -4.5V
I_D
-8.0A
-6.8A
Description
New trench HEXFET^® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
SO-8
Absolute Maximum Ratings
Parameter
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Drain-Source Voltage
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
V_GS
T_J , T_STG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambient ƒ
www.irf.com
Max.
-30
-8.0
-6.4
-32
2.0
1.3
16
± 20
-55 to + 150
Units
V
A
W
W
mW/°C
V
°C
Max.
62.5
Units
°C/W
1
12/03/10