IRF7325PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.8mm)
Available in Tape & Reel
Lead-Free
V_DSS
-12V
PD- 95721
IRF7325PbF
HEXFET^® Power MOSFET
R_DS(on) max (mW)
24@V_GS = -4.5V
33@V_GS = -2.5V
49@V_GS = -1.8V
I_D
±7.8A
±6.2A
±3.9A
Description
New P-Channel HEXFET^® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
S1
1
8
D1
ruggedized device design that HEXFET Power _G1 2
MOSFETs are well known for, provides the designer
7
D1
with an extremely efficient and reliable device for use S2 ³
in a wide variety of applications.
G2
4
6
D2
5
D2
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
Top View
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-7.8
-6.2
-39
2.0
1.3
16
± 8.0
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
R_θJL
R_θJA
www.irf.com
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ƒ
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
10/4/04