IRF7325 Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

q Trench Technology
q Ultra Low On-Resistance
q Dual P-Channel MOSFET
q Low Profile (<1.8mm)
q Available in Tape & Reel
V_DSS
-12V
PD- 94094
IRF7325
HEXFET^® Power MOSFET
R_DS(on) max (mΩ)
24@V_GS = -4.5V
33@V_GS = -2.5V
49@V_GS = -1.8V
I_D
±7.8A
±6.2A
±3.9A
Description
New P-Channel HEXFET^® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
S1
1
8
D1
ruggedized device design that HEXFET Power _G1 2
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use S2 ³
in a wide variety of applications.
G2
4
7
D1
6
D2
5
D2
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
Top V ie w
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-7.8
-6.2
-39
2.0
1.3
16
± 8.0
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
R_θJL
R_θJA
www.irf.com
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ƒ
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
2/5/01