IRF7324TRPBF Datasheet, PDF (1/8 Pages) International Rectifier – Trench Technology

PD - 95460
● Trench Technology
● Ultra Low On-Resistance
S1
● Dual P-Channel MOSFET
● Low Profile (<1.1mm)
G1
● Available in Tape & Reel
S2
● 2.5V Rated
G2
● Lead-Free
Description
New trench HEXFET^® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in battery and load management
applications.
IRF7324PbF
HEXFET^® Power MOSFET
1
2
8
D1
7
D1
V_DSS = -20V
3
6
D2
4
5 _{D2 RDS(on) = 0.018Ω}
Top View
SO-8
Absolute Maximum Ratings
Parameter
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Drain-Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
V_GS
T_J , T_STG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-9.0
-7.1
-71
2.0
1.3
16
± 12
-55 to + 150
Units
V
A
W
W
mW/°C
V
°C
Thermal Resistance
Parameter
Max.
R_θJA
Maximum Junction-to-Ambient ƒ
www.irf.com
Units
62.5
°C/W
1
6/29/04