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IRF7324D1TR Datasheet, PDF (1/8 Pages) International Rectifier – FETKY MOSFET / Schottky Diode | |||
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PD- 91789
PRELIMINARY
IRF7324D1
FETKY⢠MOSFET / Schottky Diode
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal for Mobile Phone Applications
l Generation V Technology
l SO-8 Footprint
A
1
A
2
S
3
G
4
8
K
7
K
6
D
5
D
Description
Top View
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
VDSS = -20V
RDS(on) = 0.18â¦
Schottky Vf = 0.39V
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
S O -8
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS@4.5VÂ
Pulsed Drain Current Â
Power Dissipation Â
Linear Derating Factor
Maximum
-2.9
-2.3
-23
2.0
1.3
16
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Â
± 12
-5.0
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient Â
Maximum
62.5
Notes:
 Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
 ISD ⤠-2.2A, di/dt ⤠-50A/µs, VDD ⤠V(BR)DSS, TJ ⤠150°C
 Pulse width ⤠300µs; duty cycle ⤠2%
 Surface mounted on FR-4 board, t ⤠10sec.
www.irf.com
Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
1
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