IRF7322D1 Datasheet, PDF (1/8 Pages) International Rectifier – MOSFET Schottky Diode ( VDSS = -20V , RDS(on) = 0.058W , Schottky Vf = 0.39V )

PD- 91705A
q Co-packaged HEXFET^® Power MOSFET
and Schottky Diode
q Ideal For Buck Regulator Applications
q P-Channel HEXFET
q Low V_F Schottky Rectifier
q Generation 5 Technology
q SO-8 Footprint
IRF7322D1
FETKY^™ MOSFET / Schottky Diode
A
1
8
K
V_DSS = -20V
A
2
S
3
7
K
6
D
R_DS(on) = 0.058Ω
G
4
5 _{D Schottky Vf = 0.39V}
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Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (T_A = 25°C unless otherwise noted)
Parameter
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
dv/dt
T_J, T_STG
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current Œ
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt 
Junction and Storage Temperature Range
Maximum
-5.3
-4.3
-43
2.0
1.3
16
± 12
-5.0
-55 to +150
Thermal Resistance Ratings
S O -8
Units
A
W
mW/°C
V
V/ns
°C
Parameter
R_θJA
Junction-to-Ambient 
Maximum
62.5
Units
°C/W
Notes:
ΠRepetitive rating; pulse width limited by maximum junction temperature (see figure 9)
 I_SD ≤ -2.9A, di/dt ≤ -77A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
Ž Pulse width ≤ 300µs; duty cycle ≤ 2%
 Surface mounted on FR-4 board, t ≤ 10sec.
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