IRF7317 Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

PD - 9.1568B
PRELIMINARY
IRF7317
HEXFET^® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
N-CHANNEL MOSFET
S1
1
8
D1
N-Ch P-Ch
G1
2
S2
3
7
D1
V_DSS 20V -20V
6
D2
G2
Description
Fifth Generation HEXFETs from International Rectifier
4
5
P-CHANNEL MOSFET
Top V iew
D2
R_DS(on) 0.029Ω 0.058Ω
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
S O -8
Absolute Maximum Ratings ( T_A = 25°C Unless Otherwise Noted)
Symbol
Maximum
N-Channel P-Channel
Drain-Source Voltage
V_DS
20
-20
Gate-Source Voltage
V_GS
± 12
Continuous Drain Current…
T_A = 25°C
T_A = 70°C
I_D
6.6
5.3
-5.3
-4.3
Pulsed Drain Current
I_DM
26
-21
Continuous Source Current (Diode Conduction)
I_S
2.5
-2.5
Maximum Power Dissipation …
T_A = 25°C
T_A = 70°C
P_D
2.0
1.3
Single Pulse Avalanche Energy
E_AS
100
150
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ‚
I_AR
E_AR
dv/dt
4.1
-2.9
0.20
5.0
-5.0
Junction and Storage Temperature Range
T_J, T_STG
-55 to + 150 °C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient …
Symbol
R_θJA
Limit
62.5
Units
V
A
W
mJ
A
mJ
V/ ns
Units
°C/W
12/9/97