IRF7314QPBF Datasheet, PDF (1/9 Pages) International Rectifier – Advanced Process Technology

PD - 96107A
Benefits
• Advanced Process Technology
• ÿDual P-Channel MOSFET
• ÿUltra Low On-Resistance
• ÿ175°C Operating Temperature
• ÿRepetitive Avalanche Allowed up to Tjmax
• ÿLead-Free
Description
These HEXFET ® Power MOSFET’s in a Dual SO-8
package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area.
Additional features of these HEXFET Power MOSFET’s
are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremely efficient and reliable device for use in a
wide variety of applications.
IRF7314QPbF
HEXFET^® Power MOSFET
V_DSS
-20V
R_DS(on) max
0.058@V_GS = -4.5V
0.098@V_GS = -2.7V
I_D
-5.2A
-4.42A
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
SO-8
The 175°C rating for the SO-8 package provides
improved thermal performance with increased safe
operating area and dual MOSFET die capability make
it ideal in a variety of power applications. This dual,
surface mount SO-8 can dramatically reduce board
space and is also available in Tape & Reel.
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
E_AS
I_AR
E_AR
T_J , T_STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Max.
-20
-5.2
-4.3
-43
2.4
1.7
16
± 12
610
-5.2
See Fig.14, 15, 16
-55 to + 175
Units
V
A
W
W
mW/°C
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
Max.
R_θJA
Maximum Junction-to-Ambient ƒ
www.irf.com
Units
62.5
°C/W
1
08/02/10