IRF7314Q Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET® Power MOSFET

PD -93945A
IRF7314Q
HEXFET^® Power MOSFET
Typical Applications
• Anti-lock Braking Systems (ABS)
• Electronic Fuel Injection
• Air bag
V_DSS
-20V
R_DS(on) max
0.058@V_GS = -4.5V
0.098@V_GS = -2.7V
I_D
-5.2A
-4.42A
Benefits
• Advanced Process Technology
• Dual P-Channel MOSFET
• Ultra Low On-Resistance
• 175°C Operating Temperature
S1
1
G1
2
• Repetitive Avalanche Allowed up to Tjmax ^{S2 3}
• Automotive [Q101] Qualified
G2
4
8
D1
7
D1
6
D2
5
D2
Description
To p V iew
SO-8
Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the
lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other applications.
The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual
MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
E_AS
I_AR
E_AR
T_J , T_STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain CurrentQ
Maximum Power DissipationS
Maximum Power DissipationS
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Thermal Resistance
Parameter
Max.
R_θJA
Maximum Junction-to-Ambient S
www.irf.com
Max.
-20
-5.2
-4.3
-43
2.4
1.7
16
± 12
610
-5.2
See Fig.14, 15, 16
-55 to + 175
Units
62.5
Units
V
A
W
W
mW/°C
V
mJ
A
mJ
°C
°C/W
1
03/20/02