IRF7306QPBF_10 Datasheet, PDF (1/9 Pages) International Rectifier – HEXFETPOWERMOSFET

l Advanced Process Technology
l Ultra Low On-Resistance
l Dual P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
Description
These HEXFET^® Power MOSFET's in a Dual
SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance
per silicon area. Additional features of these
HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
PD - 96105A
IRF7306QPbF
HEXFET^® Power MOSFET
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
V_DSS = -30V
R_DS(on) = 0.10Ω
SO-8
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J, T_STG
Parameter
10 Sec. Pulsed Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
-4.0
-3.6
-2.9
-14
2.0
0.016
±20
-5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R_θJA
Maximum Junction-to-Ambient„
www.irf.com
Typ.
–––
Max.
62.5
Units
°C/W
1
08/02/10