IRF7304PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – GENERATION V TECHNOLOGY

PD - 95038
IRF7304PbF
HEXFET^® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.
V_DSS = -20V
R_DS(on) = 0.090Ω
SO-8
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J, T_STG
Parameter
10 Sec. Pulsed Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
-4.7
-4.3
-3.4
-17
2.0
0.016
±12
-5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R_θJA
Maximum Junction-to-Ambient„
Typ.
–––
Max.
62.5
Units
°C/W
10/6/04