IRF7304 Datasheet, PDF (1/6 Pages) International Rectifier – Generation V Technology

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PRELIMINARY
HEXFET^® Power MOSFET
PD - 9.1240B
IRF7304
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Description
Top View
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design for
which HEXFET Power MOSFETs are well known, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
V_DSS = -20V
R_DS(on) = 0.090Ω
SO-8
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J, T_STG
Parameter
10 Sec. Pulsed Drain Current, V _GS @ -4.5V
Continuous Drain Current, V _GS @ -4.5V
Continuous Drain Current, V _GS @ -4.5V
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Thermal Resistance
R_θJA
Parameter
Junction-to-Amb. (PCB Mount, steady state)**
Max.
-4.0
-3.6
-2.9
-14
1.4
0.011
±8.0
-1.2
-55 to + 150
Min.
––––
Typ.
––––
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
127
Units
A
A
A
A
W
W/°C
V
V/ns
°C
Max.
90
Units
°C/W
To Order