IRF7303TR Datasheet, PDF (1/9 Pages) International Rectifier – Generation V Technology

l Generation V Technology
l Ultra Low On-Resistance
S1
l Dual N-Channel Mosfet
G1
l Surface Mount
l Available in Tape & Reel
S2
l Dynamic dv/dt Rating
G2
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
Absolute Maximum Ratings
ID @ TA = 25°C
I_D @ T_A = 25°C
ID @ TA = 70°C
I_DM
PD @TA = 25°C
V_GS
dv/dt
T_J, T_STG
Parameter
10 Sec. Pulsed Drain Current, VGS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
PD - 9.1239D
IRF7303
HEXFET^® Power MOSFET
1
8
D1
V_DSS = 30V
2
7
D1
3
6
D2
4
5 _{D 2 RDS(on) = 0.050Ω}
Top View
S O -8
Max.
5.3
4.9
3.9
20
2.0
0.016
± 20
5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient„
Typ.
–––
Max.
62.5
Units
°C/W
8/25/97